Hong CZhou JHuang JWang RBai WKuo J.BChen Y.JAMES-B KUO2021-09-022021-09-02201707413106https://www.scopus.com/inward/record.uri?eid=2-s2.0-85023753510&doi=10.1109%2fLED.2017.2722227&partnerID=40&md5=b075a6bfa53deb7ec8872a60aceba76chttps://scholars.lib.ntu.edu.tw/handle/123456789/580943The complete general solution of nonlinear 1-D undoped Poisson's equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verified with TCAD simulations. It is shown that this model platform is suitable for analyzing a series of emerging devices, such as double-surrounding-gate, inner-surrounding-gate, and outer-surrounding-gate nanoshell MOSFETs, all of which require different boundary conditions from the conventional gate-all-around nanowire device. ? 2017 IEEE.Boundary conditions; Gallium arsenide; Logic gates; Mathematical models; Mathematical transformations; Nonlinear equations; Poisson equation; Semiconductor device models; Semiconductor devices; Semiconductor insulator boundaries; Cylindrical coordinates; Different boundary condition; General solutions; MOS-FET; Multigate devices; Nanoscale device; Nanowire devices; Variable transformation; MOSFET devicesjournal article10.1109/LED.2017.27222272-s2.0-85023753510