10-Gb/s operation of an In<inf>0.53</inf> Ga<inf>0.47</inf> As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Liao, Y.-S.Y.-S.LiaoLin, G.-R.G.-R.LinKuo, H.-C.H.-C.KuoFeng, K.-M.K.-M.FengGONG-RU LIN2020-06-112020-06-112006https://scholars.lib.ntu.edu.tw/handle/123456789/50003010-Gb/s operation of an In<inf>0.53</inf> Ga<inf>0.47</inf> As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substratejournal article10.1109/LPT.2006.8776232-s2.0-33747783918https://www.scopus.com/inward/record.uri?eid=2-s2.0-33747783918&doi=10.1109%2fLPT.2006.877623&partnerID=40&md5=e384fb411f575c2f880926f74fd897af