Leakage current lowering and film densification of ZrO 2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

Huang, K.-W.K.-W.HuangChang, T.-J.T.-J.ChangWang, C.-Y.C.-Y.WangYi, S.-H.S.-H.YiWang, C.-I.C.-I.WangJiang, Y.-S.Y.-S.JiangYin, Y.-T.Y.-T.YinLin, H.-C.H.-C.LinChen, M.-J.M.-J.ChenHSIN-CHIH LINMIIN-JANG CHEN2021-02-042021-02-042020https://www.scopus.com/inward/record.url?eid=2-s2.0-85077920572&partnerID=40&md5=9f7cfec3dc4ba957270baecc6ce79346https://scholars.lib.ntu.edu.tw/handle/123456789/546679[SDGs]SDG7Leakage current lowering and film densification of ZrO 2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardmentjournal article10.1016/j.mssp.2020.1049332-s2.0-85077920572WOS:000513161300021