Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ.Feng, S.-W. et al.S.-W. et al.FengLin, E.-C.E.-C.LinCheng, Y.-C.Y.-C.ChengWang, H.-C.H.-C.WangCHIH-CHUNG YANGMa, K.-J.K.-J.MaShen, C.-H.C.-H.ShenLI-CHYONG CHENKim, K.H.K.H.KimLin, J.Y.J.Y.LinJiang, H.X.H.X.Jiang2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-84955319427&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/302036https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955319427&doi=10.1109%2fCLEOPR.2003.1277175&partnerID=40&md5=88d173a69a66db74853104c259fcc524Yellow luminescence from an InGaN film of high indium content shifted into blue emission upon thermal annealing. The shift was attributed to the quantum dot-like cluster size reduction through spinodal decomposition at thermal annealing. © 2003 IEEE.application/pdf82467 bytesapplication/pdfLight; Nanocrystals; Nanostructures; Optical properties; Photonics; Semiconductor quantum dots; Spinodal decomposition; Blue emission; Cluster sizes; High indium contents; Quantum dot structure; Thermal-annealing; Yellow luminescence; IndiumQuantum dot structures and their optical properties of a high-indium InGaN filmconference paper10.1109/CLEOPR.2003.12771752-s2.0-84955319427