Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

CHIEH-HSIUNG KUANChen, Y.-P.Y.-P.ChenSu, V.V.SuLee, M.-L.M.-L.LeeYou, Y.-H.Y.-H.YouChen, P.-H.P.-H.ChenLin, R.-M.R.-M.LinCHIEH-HSIUNG KUAN2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84938822704&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/392937Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal holeconference paper10.1117/12.2178768