國立臺灣大學電機工程學系暨研究所林浩雄2006-07-252018-07-062006-07-252018-07-062000-10-31http://ntur.lib.ntu.edu.tw//handle/246246/7792本研究以射頻電漿輔助氣態源分子束磊晶 法(RF plasma assisted GSMBE)在砷化鎵 基板上成長立方晶系的氮化鎵磊晶層。首 先探討低溫氮化鎵緩衝層成長條件對表面 粗糙度及後續磊晶曾成長品質的影響。我 們利用反射高能量電子束繞射法(RHEED) 與原子作用力顯微鏡(Atomic Force Microscopy) 監測緩衝層表面粗糙度，並 使用X光繞射儀及光激螢光量測等方式分 析磊晶層品質。在最佳的緩充層成長條件 下，氮化鎵磊晶層可達到立方晶系相純度 大於 95%，並有狹窄的X光繞射半寬。且 於室溫下可量得甚強的光激螢光，可知於 此磊晶程序下已可達相當品質的立方晶系 氮化鎵磊晶層。In this study, we report the effect of growth condition on the surface morphology of the initial buffer layer for cubic GaN grown by using RF plasma assisted molecular beam epitaxy. Buffer layers roughness was monitored by RHEED and Atomic Force Microscopy. X-ray diffraction measurement and photoluminescence were used to investigate the film quality. The bulk cubic GaN film grown on the optimized initial buffer layer demonstrates high phase purity, narrow X-ray FWHM and strong cubic GaN related band to band emission.application/pdf129145 bytesapplication/pdfzh-TW國立臺灣大學電機工程學系暨研究所立方晶系氮化鎵射頻電漿輔助 氣態源分子束磊晶低溫氮化鎵緩衝層Cubic GaNRF Plasma assisted GSMBEbuffer layerreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/7792/1/892215E002038.pdf