The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer

Lin, B.H.B.H.LinLiu, W.R.W.R.LiuYang, S.S.YangKuo, C.C.C.C.KuoHsu, C.-H.C.-H.HsuHsieh, W.F.W.F.HsiehLee, W.C.W.C.LeeLee, Y.J.Y.J.LeeMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443357The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layerjournal article10.1021/cg10167742-s2.0-79960066696https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960066696&doi=10.1021%2fcg1016774&partnerID=40&md5=66ea2d00595f2d86e9eceff22cc0a934