2001-08-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/677660摘要：本計畫以研究奈米量子點元件之製程及電子光學特性為目標，分為三個部份，第一部份為研製接近室溫操作之InAs/GaAs/AlGaAs奈米（QDIP），偵測波段為2至12μm。由於量子點結構在空間有侷限性，其光響應較高，暗電流較小，可以比傳統之AlGaAs/GaAs量子井紅外線光偵測器（QWIP）操作在較高之溫度，因此近來廣受重視。我們將製作自我組成（self-assembly）及兩度空間週期性排列的量子點陣列元件，測量並比較其特性。 第二部份是研製AlGaAs/GaAs/InAs量子點雷射二極體發出1.3μm及更長波長的雷射光，此型雷射二極體之優點係光波長隨溫度之變化很小，可以小到每上升一度上升0.22 nm之程度，很適合應用在光纖通訊之光源。 <br> Abstract: The goal of this project is to study the opto-electronic and the fabrication techniques of nano-size quantum dot devices. This project is divided into three parts. In the first part, we plan to fabricate near room temperature operated InAs/GaAs/AlGaAs quantum dot infrared photodetector (QDIP) to detect the infrared light in the wavelength range between 2 and 12 μm. Since quantum dots are physically confined, they have a smaller dark current and show higher photoelectric response as compared to the traditional AlGaAs/GaAs quantum well infrared photodetoctor (QWIP). This effect results in a higher operation temperature of QDIP, i.e., >100oC, and is widely recognized. Both self-assembly and regular array quantum dots will be fabricated, the device performance will be evaluated and compared. In the second part, we plan to develop AlGaAs/GaAs/InAs quantum dot laser diode which emits light at a wavelength of 1.3 μm or longer. The advantage of using this type of laser diode lies on its emission wavelength stability as the temperature fluctuates, i.e., 0.22 nm/K. This makes it suitable to be a reliable light source for optical fiber communication.奈米量子井紅外線光偵測器雷射二極體Nanometerquantum dot infrared photodetectorlaser diode