Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopy

Hsieh, C.F.C.F.HsiehChen, C.W.C.W.ChenChen, C.H.C.H.ChenLiao, M.H.M.H.Liao2019-03-112019-03-112014https://scholars.lib.ntu.edu.tw/handle/123456789/404504[SDGs]SDG9Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopyconference proceedings10.1016/j.proeng.2014.06.3512-s2.0-84949130113