Comparison of Cl<inf>2</inf>and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source

Tian, W.-C.W.-C.TianWeigold, J.W.J.W.WeigoldPang, S.W.S.W.PangWEI-CHENG TIAN2020-06-112020-06-112000https://scholars.lib.ntu.edu.tw/handle/123456789/497739Comparison of Cl<inf>2</inf>and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma sourcejournal article2-s2.0-23044522692https://www.scopus.com/inward/record.uri?eid=2-s2.0-23044522692&partnerID=40&md5=566f90de77c00f76ac61894ce5662a7b