Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

Shiojiri, M.M.ShiojiriChuo, C. C.C. C.ChuoHsu, J. T.J. T.HsuYang, J. R.J. R.YangSaijo, H.H.Saijo2008-12-242018-06-282008-12-242018-06-282006http://ntur.lib.ntu.edu.tw//handle/246246/93259application/pdf588839 bytesapplication/pdfen-USStructure and formation mechanism of V defects in multiple InGaN/GaN quantum well layersjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/93259/1/20.pdf