M. H. LeeS.-T. FanC.-H. TangP.-G. ChenY.-C. ChouH.-H. ChenJ.-Y. KuoM.-J. XieS.-N. LiuM.-H. LiaoC.-A. JongK.-S. LiM.-C. ChenC. W. LiuLIN-SHAN LEE2019-10-242019-10-242016https://scholars.lib.ntu.edu.tw/handle/123456789/428033Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETsconference paper