Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

Chen, H.-T.H.-T.ChenSu, C.-Y.C.-Y.SuTu, C.-G.C.-G.TuYao, Y.-F.Y.-F.YaoLin, C.-H.C.-H.LinWu, Y.-R.Y.-R.WuKiang, Y.-W.Y.-W.KiangYang, C.-C.C.-C.YangYEAN-WOEI KIANG2020-06-112020-06-112017https://scholars.lib.ntu.edu.tw/handle/123456789/497815Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructurejournal article10.1109/TED.2016.26311482-s2.0-85001104688https://www.scopus.com/inward/record.uri?eid=2-s2.0-85001104688&doi=10.1109%2fTED.2016.2631148&partnerID=40&md5=9d97d06abdafdf27816d55ac713c7623