Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Sun, EdwardEdwardSunSu, Fu-HsiangFu-HsiangSuChen, Ching-HuangChing-HuangChenChen, Miin-JangMiin-JangChen2012-10-242018-06-282012-10-242018-06-282010http://ntur.lib.ntu.edu.tw//handle/246246/243883en-USEnhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer depositionjournal article10.1016/j.apsusc.2010.03.047http://ntur.lib.ntu.edu.tw/bitstream/246246/243883/-1/327.pdf