DC characterization of Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT grown by Gas Source Molecular Beam Epitaxy (GSMBE)

SHEY-SHI LU2018-09-102018-09-101993http://www.scopus.com/inward/record.url?eid=2-s2.0-84907685157&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303339DC characterization of Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT grown by Gas Source Molecular Beam Epitaxy (GSMBE)conference paper