Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy

Lai, F.-I.F.-I.LaiKuo, S.Y.S.Y.KuoWang, J.S.J.S.WangHsiao, R.S.R.S.HsiaoKuo, H.C.H.C.KuoChi, J.J.ChiWang, S.C.S.C.WangWang, H.S.H.S.WangCHI-TE LIANGYANG-FANG CHEN2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-33749336354&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/321134Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxyjournal article10.1016/j.jcrysgro.2006.02.0282-s2.0-33749336354