電機資訊學院: 光電工程學研究所指導教授: 管傑雄朱澤宏Ju, Tze-HungTze-HungJu2017-03-022018-07-052017-03-022018-07-052016http://ntur.lib.ntu.edu.tw//handle/246246/272945高功率發光二極體(Light-Emitting Diode, LED)在照明的應用上日趨普遍，因此LED的發光效率衰減(efficiency droop)是一個值得關注的議題。LED的效率衰減可分為兩類，一是由電流增加所造成的發光功率下降，簡稱為J-droop，另一則是由溫度增加所造成的效率衰減，簡稱為T-droop [1]。 本論文在相同的磊晶條件下，設計週期均為3um六角型排列的三種不同深度(深度分別為2.55um、2.65um、2.75um)的圖案化藍寶石基板(Patterned Sapphire Substrates, PSSs)，利用電致發光(Electroluminescence Measurement System)積分球, 搭配溫控器，分別對封裝好後的三種不同深度PSS的LED進行變溫測量(5度C~80度C)，發現對單一樣品而言，溫度越高，T-droop越明顯。且電流密度越高，T-droop越不明顯。 此外吾人亦有一批未封裝的相同wafer，並用266nm的雷射光源對其做光致發光(Photoluminescence Measurement System)，得到磊晶品質的排序，與電致發光得到的結果相呼應。應證了磊晶品質較佳的LED有較好的溫度容忍度(temperature-tolerant)，亦即磊晶品質越好者: 溫度升高，T-droop越小，且在相同溫度下EQE越佳。說明了如需將LED在高溫下操作，則該LED的磊晶品質需越好。GaN-based Light-Emitting Diodes (LEDs) are typically grown on c-plane sapphire, or even patterned sapphire substrates (PSSs). In the same Epitaxy conduction, we designed three different depth Patterned Sapphire Substrates (2.55um, 2.65um, 2.75um). All of them are period of 3um and hexagonal arranged. We use Electroluminescence Measurement System with temperature controller to measure them from 5 ° C to 80 ° C and discuss their T-droop (The efficiency droop caused by increasing temperature) , and temperature tolerant. Moreover, we use the 266nm laser to do the Photoluminescence Measurement. After that, the sequence of the Epitaxy quality of them has been found. Consistent with the result measured by Electroluminescence Measurement System. It proves that LED with a better Epitaxy quality has a high temperature-tolerant.論文使用權限: 不同意授權氮化鎵類發光二極體圖案化藍寶石基板電子束微影微奈米結構效率衰減GaN-based Light-emitting diodesNano-Pattered Sapphire SubstratesMicro nanostructuresElectron-beam LithographyEfficiency Droopthesis