2004-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/713064摘要：本研究團隊之中程目標為「以CMOS-MEMS發展具無線傳輸能力之單晶片微機電系統技術」，計畫架構包含射頻電路、感測/致動及基材等相關研究主題由四個子計畫合作進行研發。 射頻電路功能區塊包含低雜訊放大器、混波器、壓控振盪器、功率放大器由子計畫一(呂學士)與子計畫三(黃榮堂)負責，其中壓控振盪器要同時研究電感及可變電容之效果，由兩個計畫各研究一種方法。設計規格以IEEE 802.11a 5GHz WLAN為主。 電感及變壓器之性能，對低雜訊放大器、混波器及壓控振盪器性能之影響很大，其分析、模擬及最佳化獨立出來由子計畫二(林佑昇)負責。由於一般CMOS電路用之矽基材電阻值不夠高，會造成訊號衰減，其解決之道是設法改變基材結構或電性以降低渦電流，這一部分由子計畫四(張培仁)負責。此外，子計畫四還負責發展CMOS懸浮結構平坦化技術，使得CMOS-MEMS技術能應用到光訊號處理等需要可動鏡面之微系統中。<br> Abstract: The ultimate goal of this research project is to develop CMOS-MEMS technologies for single-chip wireless microsystems. Three major areas, including RF front end, sensor/actuator, and Si substrate are jointly pursued by four sub-projects. The FR front end includes microwave switch, low noise amplifier (LNA), mixer, voltage-controlled oscillator (VCO), and power amplifier (PA). Sub-project 1 will focus on VCO and mixer while sub-project 3 on PA and an alternative approach to VCO. The specifications for these devices would follow IEEE 802.11a 5GHz WLAN. The characteristics of the on-chip inductors and transformers are crucial to the over-all performance of RF circuitry such as LNA, mixer, and VCO. For this reason, the analysis, simulation, and optimization of inductors and transformers are studied in sub-project 2. Besides, the conductivity of silicon substrate has been a major source of attenuation for microwave signal propagating in a CMOS structure. Substrate modification for reducing signal loss will be investigated in sub-project 4. In addition, profile control of CMOS-MEMS structures is in the portfolio of sub-project 4 as well.積體電路微機電金氧半導體感測器致動器integrated circuitMEMSCMOSsensoractuator