The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages

Liao, M.-H.M.-H.LiaoHsieh, C.-P.C.-P.HsiehLee, C.-C.C.-C.LeeMING-HAN LIAO2020-01-132020-01-132017https://scholars.lib.ntu.edu.tw/handle/123456789/447950The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltagesjournal article10.1063/1.49834012-s2.0-85019248090https://www.scopus.com/inward/record.uri?eid=2-s2.0-85019248090&doi=10.1063%2f1.4983401&partnerID=40&md5=9c4bbee3e6c46ea90f6680a06ff04505