Zheng Z.-AVITA PI-HO HU2021-09-022021-09-02201902714310https://www.scopus.com/inward/record.uri?eid=2-s2.0-85066784164&doi=10.1109%2fISCAS.2019.8702126&partnerID=40&md5=3251eddfd3242d77aeb4cdbfb0f166efhttps://scholars.lib.ntu.edu.tw/handle/123456789/581195In this work, we compare the read stability and writability between 6T negative capacitance FinFET (NC-FinFET) SRAM cell and the baseline 6T FinFET SRAM cell in the subthreshold and superthreshold operations. In the subthreshold operation (VDD = 0.4V), NC-FinFET SRAM cell shows better read, write, and hold static noise margins than FinFET SRAM cell. During read operation at VDD = 0.4V, pass-gate (PG) NC-FinFET becomes weaker due to the negative differential resistance (NDR) in the saturation region, which reduces the read disturb voltage of NC-FinFET SRAM cell. During write operation at VDD = 0.4V, PG NC-FinFET with internal voltage amplification becomes stronger in the linear region, and pull-up NC-FinFET with NDR effect becomes weaker in the saturation region, which improves the writability of NC-FinFET SRAM cell. In other words, negative capacitance effect resolves the conflict between read stability and writability for subthreshold operation. For the superthreshold operation (VDD = 1V), NC-FinFET SRAM cell still exhibits 1.73 times larger RSNM (= 183mV) than FinFET SRAM cell, and adequate WSNM (= 198mV). 6T NC-FinFET SRAM cell performs superior stability for both subthreshold and superthreshold operations. ? 2019 IEEECapacitance; Cells; Cytology; Ferroelectric materials; Negative resistance; Stability; Static random access storage; Threshold elements; Internal voltage; Negative capacitance; Negative capacitance effect; Negative differential resistances; Saturation region; Static noise margin; Subthreshold operation; Write operations; FinFETconference paper10.1109/ISCAS.2019.87021262-s2.0-85066784164