2020-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/703646摘要：第五代行動通訊毫米波頻段的標準已經慢慢出爐，大部分國家的操作頻率也陸續釋 出。本計畫的主要目標是開發一個雙頻/寬頻毫米波相位陣列系統所需的關鍵元件 包括功率放大器、低雜訊放大器、收發切換開關、相移器、升降頻混頻器與本地振 盪訊號源。為了滿足大部分國家所指定的頻率，我們的操作頻率訂在24.25-29.5 GHz與37-43.5 GHz這兩個頻段。目前正在執行的計畫中，已經完成一個CMOS雙 頻功率放大器與一個GaAs pHEMT雙頻功率放大器的設計與量測，寬頻低雜訊放 大器也正在進行設計。在這個兩年的計劃中，我們將在第一年繼續以互補式金氧半 導體製程與砷化鎵pHEMT製程開發所需的相移器與收發切換開關。第二年的工作 則是設計本地振盪訊號源與升降頻混頻器。<br> Abstract: The 5G mobile communication standard is going finalized, and the frequency bands of most country are clear. The main goal of this project is to develop the key components of a dual-band/wideband phased array system which include power amplifier, low-noise amplifier, T/R switch, phase shifter, up-/downconversion mixer and local oscillation source. To satisfy the designated frequency bands of the 5G mobile communication system in most country, the target frequency bands are 24.25-29.5 GHz and 37-43.5 GHz. In our current project, two dual-band power amplifiers implemented by CMOS and GaAs pHEMT are successfully developed, and the design of a wideband LNA is in progress. In this 2-year project, the design of the phase shifter and T/R switch are arranged in the first year by using CMOS and GaAs pHEMT process. T LO signal source and image rejection mixer are planning to be developed in the second year by using CMOS process.第五代行動通訊雙頻寬頻相位陣列射頻積體電路互補式金氧半導體砷化鎵假型高電子移動率電晶體5G mobile communicationdual-bandwidebandphased arrayradio frequencyintegrated circuit (IC)CMOSGaAspHEMT