Chaudhary, MayurMayurChaudharyYA-PING CHIUet. al.2025-08-082025-08-082025-05https://scholars.lib.ntu.edu.tw/handle/123456789/731145Here, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS2 (1L-MoS2) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (∼108) and a near-ideal subthreshold swing of ∼88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ∼ 102 at a gate bias of 5 V with endurance of ∼100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ∼93 % was achieved.Defect engineeringMemtransistorSulfur vacanciesTransition metal dichalcogenideX-ray monochromatic beam (mono-beam) radiationjournal article10.1016/j.mattod.2025.02.001