Chen K.H.Lai Y.L.Lin J.C.Song K.J.Chen L.C.Huang C.Y.LI-CHYONG CHEN2022-08-092022-08-09199509259635https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000388583&doi=10.1016%2f0925-9635%2894%2905319-7&partnerID=40&md5=825e23820948cc1710c3da5a84eb3f73https://scholars.lib.ntu.edu.tw/handle/123456789/616464The residual stress in microwave plasma-enhanced CVD diamond film was analyzed using a Raman spectrometer with micrometer spatial resolution. This enables effective study of isolated crystals grown in the same deposition run. A variation of the Raman line shape near 1332 cm-1 was observed from different crystals in the same sample. A phenomenological model was used to describe the shift and splitting of the diamond Raman line, from which the type and the magnitude of the stress in PECVD grown diamond can be assessed. The interrelationship and the origin of the stress in the film is discussed. © 1995.Diamond;Raman spectroscopy;Stressjournal article10.1016/0925-9635(94)05319-72-s2.0-0000388583