Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

JIUN-YUN LI2018-09-102018-09-102016http://www.scopus.com/inward/record.url?eid=2-s2.0-84964031558&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/396608Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technologyconference paper10.1109/IEDM.2015.7409701