Miller, Andrew J.Andrew J.MillerHardy, Will J.Will J.HardyLuhman, Dwight R.Dwight R.LuhmanBrickson, MitchellMitchellBricksonBaczewski, AndrewAndrewBaczewskiLiu, Chia YouChia YouLiuJIUN-YUN LILilly, Michael P.Michael P.LillyLu, Tzu MingTzu MingLu2023-06-262023-06-262022-09-1524699950https://scholars.lib.ntu.edu.tw/handle/123456789/633078Lithographic quantum dots in strained-Ge/SiGe have rapidly progressed from the realization of a single-hole quantum dot to multiqubit devices. We present a measurement of the out-of-plane g factor for a single-hole quantum dot in this material. This experiment avoids the strong orbital effects present in the higher p-like orbitals in this configuration and validates the expected g-factor anisotropy. The results are in good agreement with calculations of the g factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, showing strong tunability through both the B field and the charge state.ELECTRON; QUBITS; Physics - Mesoscopic Systems and Quantum Hall Effect; Physics - Mesoscopic Systems and Quantum Hall EffectEffective out-of-plane g factor in strained-Ge/SiGe quantum dotsjournal article10.1103/PhysRevB.106.L1214022-s2.0-85139247465WOS:000874950800002https://api.elsevier.com/content/abstract/scopus_id/85139247465