Liao, C.-S.C.-S.LiaoJENN-GWO HWU2020-06-112020-06-112015https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959237113&doi=10.1149%2f06931.0049ecst&partnerID=40&md5=8de128aa20394b16417731b708a36206The fabrication and electrical characteristics of a capacitor with metal-insulator-metal-insulator-semiconductor structure, Al/Al2O3/ Al/AlSixOy/SiO2/Si(p), is demonstrated. Both the SiO2 and Al2O3 layers were grown by anodic oxidation at room temperature. There are three different pattern sizes of the fabricated devices. The transient currents of the devices after applying voltage pulse stresses were investigated. After applying positive voltage stress, negative transient current could be read, and vice versa. It was found that the positive read currents of the devices are proportional to device perimeters, and the negative read currents are independent of the device areas. The possible contributing factors of the results are fringing field effect and the change of stored charge in the AlSixOy layer. © The Electrochemical Society.Alumina; Aluminum oxide; Anodic oxidation; Electric fault currents; Electrodeposition; Electrodes; Metal insulator boundaries; Metallizing; Metals; MIM devices; MIS devices; Nanocomposite films; Nanostructures; Oxide films; Power quality; Semiconductor insulator boundaries; Silica; Silicon; Thin films; Anodic oxide film; Contributing factor; Electrical characteristic; Fabricated device; Fringing field effects; Metal insulator metals; Positive voltage; Transient current; Transientsconference paper10.1149/06931.0049ecst2-s2.0-84959237113