Shih, Pi-JuPi-JuShihYang, Cheng-HsuehCheng-HsuehYangLiao, Pin-ChiPin-ChiLiaoLin, Wei-ChenWei-ChenLinChen, Fa-HuaFa-HuaChenChen, Jeng-ChungJeng-ChungChenCao, LiminLiminCaoChuang, ChiashainChiashainChuangLiang, Chi-TeChi-TeLiang2025-08-042025-08-042024-12-23https://scholars.lib.ntu.edu.tw/handle/123456789/730918We present a straightforward method which may greatly simplify and lower the threshold for determining the phase of the relatively enigmatic quantum material—ZrTe5. In this study, without directly probing the band structure, we identify the topological phase of the three-dimensional (3D) bulk ZrTe5 crystal solely through low-temperature electrical and magnetotransport measurements. A two-dimensional (2D) weak antilocalization (WAL) effect was observed in our bulk ZrTe5 crystal, along with clear Shubnikov-de Haas oscillations. The large prefactor α derived from WAL analyses indicates the presence of multiple conducting channels in the bulk ZrTe5 crystal, where each channel is associated with individual 2D ZrTe5 layers. It is the large α value provides insights into the topological Dirac semimetal phase inherent to our ZrTe5 crystal. Additionally, we analyze the pronounced linear magnetoresistance and saturation behavior under a perpendicular magnetic field. Our results suggest that bulk ZrTe5 crystals, which exhibit unique layered transport features, serve as a promising platform for further research in quantum phases and transitions in 3D quantum systems.Dirac semimetallow-temperature transportmagnetotransportphenomenatopological insulatorZrTe5journal article10.1088/1361-6528/ad9d48