Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation

Tseng, P.-H.P.-H.TsengHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84885623869&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/378073Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidationconference paper10.1149/05301.0331ecst