Low temperature chemical vapor deposition growth of -SiC on (100) Si using methylsilane and device characteristics

Liu, C. W.C. W.LiuSturm, J. C.J. C.SturmLiuCW2009-03-252018-07-062009-03-252018-07-061997http://ntur.lib.ntu.edu.tw//handle/246246/148136application/pdf1198329 bytesapplication/pdfen-USLow temperature chemical vapor deposition growth of -SiC on (100) Si using methylsilane and device characteristicsjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148136/1/05.pdf