Chien C.-YChen M.-HPai C.-WLee Y.-JHuang C.-CSu V.-CCHIEH-HSIUNG KUAN2021-09-022021-09-022020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85095432108&doi=10.1364%2fCLEO_SI.2020.STu3P.6&partnerID=40&md5=5e9370110f53f9be7411d5c7445dc3a1https://scholars.lib.ntu.edu.tw/handle/123456789/580666A method for the modulation of QCSE inside multiple-quantum wells of InGaN-based LEDs is proposed and confirmed with photoluminescence, Raman spectra, and electroluminescence using an integrating sphere. ? OSA 2020 ? 2020 The Author(s)Electroluminescence; III-V semiconductors; Modulation; Sapphire; Semiconductor quantum wells; Hexagonal pyramids; InGaN-based LED; Integrating spheres; Patterned sapphire substrate; Light emitting diodesconference paper10.1364/CLEO_SI.2020.STu3P.62-s2.0-85095432108