Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

Pal, J.J.PalMigliorato, M. A.M. A.MiglioratoLi, C. K.C. K.LiWu, Y. R.Y. R.WuCrutchley, B. G.B. G.CrutchleyMarko, I. P.I. P.MarkoSweeney, S. J.S. J.SweeneyYUH-RENN WU2018-09-102018-09-102013http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000323510900005&KeyUID=WOS:000323510900005http://scholars.lib.ntu.edu.tw/handle/123456789/377760[SDGs]SDG7Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field managementjournal article10.1063/1.4818794