Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As

Zheng, JFJFZhengTsai, WWTsaiMINGHWEI HONGLin, TDTDLinChen, CPCPChenKwo, JJKwoWang, XWXWWangMa, TPTPMa2018-09-102018-09-102007http://scholars.lib.ntu.edu.tw/handle/123456789/331383San Francisco, CA, USAEnhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8Asjournal article