蔡定平臺灣大學：物理研究所嚴昱賢Yan, Yu-XianYu-XianYan2007-11-262018-06-282007-11-262018-06-282007http://ntur.lib.ntu.edu.tw//handle/246246/54576在本論文中, 我們將利用讀、寫波長分別為633 nm及658nm之雷射泵探系統研究不同膜層結構的初鍍態相變化薄膜之記錄點形式，並討論在不同入射功率及雷射脈衝時間條件下，相變化薄膜所形成的記錄點形式之變化;且經由原子力顯微儀(AFM)對記錄點表面形貌的掃探結果，我們可充份且完整地了解相變化記錄點的形成過程。從這些量測結果中可歸納出記錄點光學影像、表面形貌和反射率變化過程彼此間的對應關係，也釐清了各薄膜膜層對於光熱擴散所扮演的角色。此外，我們亦研究以氧化鋅(ZnOx)薄膜作為近場光學主動層的多層膜結構，發現氧化鋅(ZnOx)薄膜具有提高反射率以及縮小記錄點的效果，此結果說明氧化鋅薄膜可提高對於奈米記錄點的解析能力，在光學儲存的應用上可藉以達到次世代超高儲存容量的目的。最後，本研究中的相變化薄膜之特殊光熱效果也可應用於未來的奈米光子學範疇中。Abstract In this thesis, we study the formation of recording marks on as-deposited Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitraty pattern of recording marks can be written on phase-change material precisely by changing layerd structure and tuning incident power and pulse duration. For the further study in ultra-high density recording, we apply a zinc oxide (ZnOx) nano thin film on phase-change recording layer. The results show the tiny bright spots and specific properties can be obtained by the interaction between ZnOx nano thin film and the nanostructured recording marks.口試委員會審定書.....................................................................................I 誌謝...........................................................................................................II 中文摘要..................................................................................................IV 英文摘要 (Abstract)................................................................................V 目錄..........................................................................................................VI 圖目錄.......................................................................................................X 表目錄.................................................................................................XVII 第一章 緒論..............................................................................................1 1-1前言......................................................................................................1 1-2相變化材料..........................................................................................1 1-2-1相變化過程....................................................................................1 1-2-2結晶過程類型................................................................................4 1-2-3相變化材料演進............................................................................6 1-2-4相變化材料Ge2Sb2Te5結構..........................................................8 1-3相變化光碟片簡介............................................................................14 第二章 實驗儀器基本架構....................................................................18 2-1前言....................................................................................................18 2-2四靶濺鍍機........................................................................................18 2-2-1儀器簡介及用途..........................................................................18 2-2-2樣品製作參數..............................................................................22 2-3靜態測試儀........................................................................................22 2-3-1 儀器簡介及用途…....................................................................22 2-3-2儀器架構與元件介紹..................................................................22 2-3-2-1儀器架構...............................................................................22 2-3-2-2雷射光泵探系統主要光學元件介紹...................................24 2-3-2-3校正工作...............................................................................29 2-3-2-4雷射光初始化樣品的方法...................................................29 2-3-2-5光學寫入實驗流程...............................................................30 2-4原子力顯微鏡....................................................................................33 2-4-1儀器簡介及用途..........................................................................33 2-4-2工作操作模式..............................................................................34 第三章 實驗討論與分析........................................................................37 3-1前言....................................................................................................37 3-2實驗樣品參數....................................................................................38 3-3相變化記錄層....................................................................................40 3-3-1單層ZnS-SiO2薄膜實驗結果.....................................................41 3-3-2雙層未包夾的相變化記錄層......................................................42 3-3-2-1固定as-Ge2Sb2Te5膜厚為15nm實驗結果...........................43 3-3-2-1-1實驗結果........................................................................43 3-3-2-1-2記錄點的分類................................................................44 3-3-2-1-3記錄點與寫入功率的關係............................................45 3-3-2-1-4記錄點與作用時間的關係............................................48 3-3-2-2比較不同as-Ge2Sb2Te5膜厚實驗結果.................................53 3-3-2-2-1實驗結果........................................................................53 3-3-2-2-2記錄點的分類................................................................57 3-3-2-2-3不同厚度記錄層上的記錄點與寫入功率的關係........59 3-3-2-2-4不同厚度記錄層上的記錄點與作用時間的關係........60 3-3-2-2-5記錄點與記錄層厚度的關係........................................61 3-3-3三層包夾的相變化記錄層..........................................................64 3-3-3-1比較有無介電層包夾的相變化記錄層...............................64 3-3-3-2比較不同第二介電層膜厚的相變化記錄層.......................69 3-4近場光學多層膜結構........................................................................74 3-4-1氧化鋅薄膜介紹..........................................................................74 3-4-2單層氧化鋅薄膜實驗結果..........................................................74 3-4-3三層氧化鋅薄膜實驗結果..........................................................76 3-4-4比較有無氧化鋅膜層的相變化材料多層膜..............................76 3-4-5比較不同氧化鋅膜厚的近場光學多層膜..................................79 3-4-6比較不同間隔層厚度的近場光學多層膜..................................80 3-4-7比較不同as-Ge2Sb2Te5膜厚的近場光學多層膜.......................82 3-5特殊膜層參數的氧化鋅近場光學多層膜........................................84 3-5-1近場光學多層膜和相變化記錄層之記錄點比較......................84 第四章 結論............................................................................................88 參考文獻..................................................................................................90en-US相變化記錄點奈米鍺銻碲結晶態非晶態phase changerecording marknanoGe2Sb2Te5crystalline stateas-depositedamorphousthesis