T. M. LuL. A. TracyD. LarocheS. –H. HuangY. ChuangY. –H SuJIUN-YUN LICHEE-WEE LIU2019-10-242019-10-24201720452322https://scholars.lib.ntu.edu.tw/handle/123456789/428004https://www.scopus.com/inward/record.uri?eid=2-s2.0-85020171992&doi=10.1038%2fs41598-017-02757-2&partnerID=40&md5=9d88f0fda7bdc373d5d2b7ca681b400fQuantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 1010 cm-2, this ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors. © 2017 The Author(s).journal article10.1038/s41598-017-02757-2285726402-s2.0-85020171992