Strain engineering of nanoscale Si MOS devices

Huang, J.J.HuangChang, S.-T.S.-T.ChangHsieh, B.-F.B.-F.HsiehLiao, M.-H.M.-H.LiaoWang, W.-C.W.-C.WangLee, C.-C.C.-C.LeeMING-HAN LIAO2020-01-132020-01-132010https://scholars.lib.ntu.edu.tw/handle/123456789/447976Strain engineering of nanoscale Si MOS devicesjournal article10.1016/j.tsf.2009.10.0982-s2.0-73649113143https://www.scopus.com/inward/record.uri?eid=2-s2.0-73649113143&doi=10.1016%2fj.tsf.2009.10.098&partnerID=40&md5=e97624279c945c821d91d4fcc9df5434