Gupta MVITA PI-HO HU2022-04-252022-04-25202121628769https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108423419&doi=10.1149%2f2162-8777%2fac0607&partnerID=40&md5=ccb4efd749abd59708340334db261adahttps://scholars.lib.ntu.edu.tw/handle/123456789/607353In this work, we report on the impact of channel doping on the performance of junctionless (JL) and negative capacitance (NC) JL devices designed with a gate length (L g) of 18 nm. Results showcase that NCJL devices exhibit negative internal gate voltage (V int) at zero gate bias, which becomes more negative as the channel doping increases. The occurrence of negative V int is the unique feature of NCJL transistors, which is responsible for efficient channel depletion. The analysis showcases that negative V int in NCJL devices leads to lower off-current along with NC induced higher on-current than conventional JL devices. The results reported in this work provide insights into the functionality of NCJL devices and highlight the benefits of designing negative capacitance junctionless devices. ? 2021 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.Channel dopingsEfficient channelsGate lengthGate voltagesJunctionless devicesJunctionless transistorsNegative capacitanceUnique featuresCapacitancejournal article10.1149/2162-8777/ac06072-s2.0-85108423419