Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy

J. S. WangG. R. ChenL. W. SungHAO-HSIUNG LIN2018-09-102018-09-101999-01http://scholars.lib.ntu.edu.tw/handle/123456789/351817Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxyconference paper