Lee C.-HHo S.-YZhang J.-XLin H.-KJIAN-JANG HUANG2021-09-022021-09-022017https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029492766&partnerID=40&md5=77797d84df2adf39d1af7d70b2d47033https://scholars.lib.ntu.edu.tw/handle/123456789/580958Current collapse is a phenomenon which increase dynamic Ron when the device is operated in high gate and drain bias stress condition. In this research, Al2O3/p-GaN/AlGaN/GaN Enhancement-mode (E-mode) MIS-HEMTs are fabricated. The phenomena of current collapse are discussed between the single heterostructure (SH) MIS-HEMT and double heterostructure (DH) MIS-HEMT. Unlike general researches that focus on the surface modulation to eliminate the phenomenon, this research provides another solution from the perspective of redesign of the material structure. With an AlGaN bottom barrier, the electron confinement of DH remains strong and stable. The better backside confinement suppresses the 2DEG spillover into buffer layer. Thus, the effect of current collapse can be reduced.Aluminum alloys; Drain current; Electric current measurement; Field effect transistors; Gallium alloys; Gallium nitride; Heterojunctions; Manufacture; Semiconductor device manufacture; Current collapse; Double heterostructures; Drain bias; Electron confinement; Enhancement mode (E mode); Enhancement modes; Material structure; Surface modulations; High electron mobility transistorsconference paper2-s2.0-85029492766