Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect

M. T. LinE. C. SunJ. B. KuoJAMES-B KUO2018-09-102018-09-102003-12http://scholars.lib.ntu.edu.tw/handle/123456789/304108Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effectconference paper