HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applications

Maikap, S.S.MaikapTzeng, P.-J.P.-J.TzengWang, T.-Y.T.-Y.WangLee, H.-Y.H.-Y.LeeLin, C.-H.C.-H.LinWang, C.-C.C.-C.WangLee, L.-S.L.-S.LeeYang, J.-R.J.-R.YangTsai, M.-J.M.-J.TsaiJER-REN YANG2020-05-122020-05-122007https://scholars.lib.ntu.edu.tw/handle/123456789/491634HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applicationsjournal article10.1143/JJAP.46.18032-s2.0-34547346283https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547346283&doi=10.1143%2fJJAP.46.1803&partnerID=40&md5=85a9b114d0265cb4e675e416ebda612d