HSUEN-LI CHENChao W.-CKo F.-HChu T.-CCheng H.-C.2022-11-162022-11-16200300214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0041862477&doi=10.1143%2fjjap.42.3885&partnerID=40&md5=3fac33280160bd39aa463222397ce007https://scholars.lib.ntu.edu.tw/handle/123456789/625366In this paper, we report on a bottom antireflective coating (BARC) layer for both KrF and ArF lithography processes. The antireflective layers are composed of diluted low-dielectric constant materials, such as bisbenzo(cyclobutene) (BCB), fluorinated poly(arylene)ether (FLARE) and SiLK. By adding an optimized thickness of diluted low-dielectric constant materials, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. Diluted low-dielectric constant materials also have great potential to be used as BARC layers on various highly-reflectance substrates for metalinterconnect applications. Using this structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. After the lithography procedure, the diluted low-dielectric constant layer need not be removed.ArF lithography; Bottom antireflective coatings; Diluted; KrF lithography; Low-dielectric constant materialsAntireflection coatings; Aromatic hydrocarbons; Gas lasers; Interfaces (materials); Permittivity; Bottom antireflective coatings (BARC); Photolithographyconference paper10.1143/jjap.42.38852-s2.0-0041862477