Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications

Pan, C.-L.C.-L.PanGONG-RU LIN2020-06-112020-06-111998https://scholars.lib.ntu.edu.tw/handle/123456789/500015Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applicationsconference paper10.1117/12.3061532-s2.0-0032225666https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032225666&doi=10.1117%2f12.306153&partnerID=40&md5=52db54c1654335aaf772fa9a3c5796e4