The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's

Lan, H.H.LanLin, Y.-S.Y.-S.LinMeng, C.-C.C.-C.MengLu, S.-S.S.-S.Lu2018-09-102018-09-101999http://www.scopus.com/inward/record.url?eid=2-s2.0-0032713670&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350419The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET'sjournal article10.1109/16.737440