Dislocation generation mechanisms of In <inf>x</inf> Ga <inf>1-x</inf> As (0?x?1) epilayers grown on (100) InP substrates by molecular beam epitaxy

Chang, S.-Z.S.-Z.ChangLee, S.-C.S.-C.LeeChen, C.R.C.R.ChenChen, L.J.L.J.ChenSI-CHEN LEE2020-06-112020-06-111994https://scholars.lib.ntu.edu.tw/handle/123456789/498799Dislocation generation mechanisms of In <inf>x</inf> Ga <inf>1-x</inf> As (0?x?1) epilayers grown on (100) InP substrates by molecular beam epitaxyjournal article10.1063/1.3563862-s2.0-0011331723https://www.scopus.com/inward/record.uri?eid=2-s2.0-0011331723&doi=10.1063%2f1.356386&partnerID=40&md5=b80227d4bd32e0669eb5f96ee46b0ad5