Chao, J.-J.J.-J.ChaoShiu, S.-C.S.-C.ShiuCHING-FUH LIN2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-78650105040&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/357965In this study, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can achieve 5.8 %. © 2010 IEEE.[SDGs]SDG7Etch mask; Ethylenedioxythiophenes; GaAs; Gaas nanowires; GaAs wafer; Hybrid solar cells; Inductively coupled-plasma reactive ion etching; Interpenetrating heterojunctions; One-sun illumination; P-n junction; PEDOT:PSS; Performance characterization; Planar cells; Poly(styrene sulfonate); Power conversion efficiencies; Vertically aligned; Conversion efficiency; Electromagnetic induction; Gallium alloys; Gallium arsenide; Heterojunctions; Inductively coupled plasma; Nanowires; Photovoltaic effects; Reactive ion etching; Silicon compounds; Solar cells; Semiconducting galliumconference paper10.1109/PVSC.2010.5614644