李嗣涔臺灣大學：電子工程學研究所王自強Wang, Tzu-ChiangTzu-ChiangWang2007-11-272018-07-102007-11-272018-07-102005http://ntur.lib.ntu.edu.tw//handle/246246/57487半絕緣多晶矽薄膜是製作二極體及整流器時，用於P/N界面絕緣披覆的其中一種製程，本論文探討將半絕緣多晶矽薄膜應用於高壓整流器 (2400 V) 及高功率二極體 (6000 W) 之效果。藉由低壓化學汽相沉積爐的系統並搭配氣體流量比例為 Xg=[N2O]/[N2O]+[SiH4]=0.12，我們成功地製備半絕緣多晶矽薄膜，它的特性如下: 絕緣能力為2×108 V/cm、於 4吋晶片上之薄膜沉積厚度差小於 3%。半絕緣多晶矽薄膜應用於2400V之高壓整流器亦被成功地製備，其中特性最好的一個在於應用半絕緣多晶矽薄膜後將逆向崩潰電壓由傳統的玻璃絕緣層方式提昇40%，由此可以免除用晶粒堆疊以提高逆向電壓的需要並延伸出新的表面粘著構裝方式之高壓整流器。另一方面，半絕緣多晶矽薄膜應用於6000 W之高功率自動機突波吸收二極體亦被成功地製備，其主要提昇之處為，藉由半絕緣多晶矽薄膜之應用將傳統使用氧化矽絕緣之高功率自動機突波吸收二極體的逆向衝擊電流承受能 力提高 20%並且延長其使用壽命。Semi-insulating poly-silicon (SIPOS) layer has been applied to passivate the P/N junction of diodes and rectifiers. The application of SIPOS passivation layer in high voltage rectifiers (2400 V) and high power diodes (6000 W) are studied in this thesis. The SIPOS passivation layer deposited by LPCVD with gas flow ratio Xg=[N2O]/[N2O]+[SiH4]=0.12 has been achieved successfully, it’s performance is as following: insulation capacity is 2×108 V/cm and 3% variation in thickness on 4 inch substrate wafer. The application of SIPOS passivation layer for high reverse voltage (2400V) damper and clamper rectifiers were fabricated successfully. The best one can withstand reverse voltage higher 40% than that of the traditional glass passivation layer, this leads to a new device packaged using surface mount device (SMD). In another application, the SIPOS passivation layer for high power (6000W) automotive transient voltage suppressors (TVS) and power zener diodes are fabricated successfully, the advantages are the increase of the capability of enduring reverse surge current about 20% than that of the traditional wet oxidation passivation process and extend the operation life cycles of the diode.Contents Chapter 1 Introduction 1 Chapter 2 Experiments 4 2.1 Growth System 4 2.1.1 Low Pressure Chemical Vapor Deposition (LPCVD) 4 2.1.2 Wet oxidation system 4 2.1.3 Glass sintering system 5 2.2 Samples Preparation 9 2.3 Deposition Procedures 11 2.4 Measurement Techniques 12 2.4.1 Film Thickness 12 2.4.2 Current–Voltage Characteristics 12 2.4.3 FT-IR 12 2.4.4 Secondary Ion Mass Spectroscopy (SIMS) 13 2.4.5 Rectifier and zener diode characteristic digital tester 13 Chapter 3 Optimization and analyses of the semi-insulating poly-silicon passivation layer 14 3.1 The effect of gas flow ratio Xg on the properties of SIPOS 14 3.2 The uniformity of SIPOS film 20 3.3 The atomic concentrations of SIPOS film 26 Chapter 4 Application of semi-insulating ploy-silicon (SIPOS) passivation layer for high voltage damper and clamper rectifier 30 4.1 Introduction 30 4.2 Properties of the semi-insulating poly-silicon (SIPOS) passivation layer 36 4.3 Comparison with other passivation processes 42 Chapter 5 Application of semi-insulating poly-silicon (SIPOS) passivation layer for transient voltage suppressors (TVS) and power zener diode 45 5.1 Introduction 45 5.2 Application of SIPOS passivation layer for TVS diode 52 5.3 Performance of SIPOS passivation layer for high power TVS diode 59 Chapter 6 Conclusions 63 Bibliography …………………………………………652399682 bytesapplication/pdfen-US絕緣層二極體整流器多晶矽passivation layerdioderectifierpoly siliconthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57487/1/ntu-94-P92943012-1.pdf