Chia-Ying SuChun-Han LinYu-Feng YaoWei-Heng LiuMing-Yen SuHsin-Chun ChiangMeng-Che TsaiCharng-Gan TuHao-Tsung ChenYean-Woei KiangCHIH-CHUNG YANG2019-10-242019-10-24201710944087https://scholars.lib.ntu.edu.tw/handle/123456789/427621https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029141979&doi=10.1364%2fOE.25.021526&partnerID=40&md5=57b2c0a20da2b3aae6ec3c66066a792fThe high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 ìm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs. © 2017 Optical Society of America.Bandwidth; Charge injection; Efficiency; Gallium nitride; Hole concentration; Modulation; Plasmons; Circular mesa; Efficiency droops; Electron blocking layer; Hole injection; Internal quantum efficiency; Modulation bandwidth; Output intensity; Surface plasmon coupling; Light emitting diodesjournal article10.1364/oe.25.021526290414502-s2.0-85029141979