Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer

Huang K.-W.Cheng P.-H.Lin Y.-S.Wang C.-I.Lin H.-C.HSIN-CHIH LINMIIN-JANG CHEN2019-11-272019-11-27201700218979https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028940282&doi=10.1063%2f1.5001129&partnerID=40&md5=0313b4530a5f79c2804fe17b15160e62https://scholars.lib.ntu.edu.tw/handle/123456789/432409Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayerjournal article10.1063/1.50011292-s2.0-85028940282