Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology

YI-JAN EMERY CHENKuo, W.-M.L.W.-M.L.KuoChen, Y.-J.E.Y.-J.E.ChenCressler, J.D.J.D.CresslerFreeman, G.G.FreemanChen, Y.-J.E.Y.-J.E.Chen2018-09-102018-09-102005http://www.scopus.com/inward/record.url?eid=2-s2.0-33847217284&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314309Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technologyconference paper10.1109/APMC.2005.1606401