Lou Z.F.Liao C.-Y.Hsiang K.-Y.Li Z.-H.Chang S.-H.Chen T.-C.MIN-HUNG LEE2024-11-262024-11-262024-01-0100189383https://scholars.lib.ntu.edu.tw/handle/123456789/723278A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity αP = 0.07) and applicable conductance ratio GMax/Gmin, Δ G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design. © 1963-2012 IEEE.enfalseDeep neural network (DNN)detrappingferroelectric FET (FeFET)synapsejournal article10.1109/TED.2024.34800542-s2.0-85208232423